Samsung to make Nvidia's future HBM base dies on TSMC's 3nm node, Korean paper says

what happened

Samsung Electronics is reportedly set to rely on TSMC's 3-nanometre process for base dies in Nvidia's next-generation custom high-bandwidth memory. Reuters, citing the Seoul Economic Daily, said the arrangement would be Samsung's first hands-on work with the Taiwanese foundry at the HBM stage. According to the paper, Nvidia has asked Samsung, SK Hynix and Micron to adopt TSMC's process for NVHBM base dies and sixth-generation DRAM for core dies.

Samsung reportedly accepted these requirements after an internal review, though it intends to keep its in-house model for standard HBM and custom chips for other clients. It is also weighing whether its own foundry could make NVHBM base dies should demand exceed TSMC's capacity.

why it matters

NVHBM, unveiled in August, integrates Nvidia's memory controller into the base die to standardise custom memory across several suppliers. For the market, a shift of part of HBM production toward contract foundry processes could raise demand for TSMC capacity and reshuffle share among memory makers. The information rests on a single newspaper report citing unnamed industry sources.

market impact

Samsung, SK Hynix, Micron, TSMC: possible shift in foundry workloads and HBM supply share for Nvidia

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